1998. 7. 8
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC107M~KRC109M
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
TYPE NO.
R1(k )
R2(k )
KRC107M
10
47
KRC108M
22
47
KRC109M
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC107M 109M
V
O
50
V
Input Voltage
KRC107M
V
I
30, -6
V
KRC108M
40, -7
KRC109M
40, -15
Output Current
KRC107M 109M
I
O
100
mA
Power Dissipation
P
D
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
R1
R2
COMMON
OUT
IN
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